Packaging devices and methods of manufacture thereof

ABSTRACT

Packaging devices and methods of manufacture thereof for semiconductor devices are disclosed. In some embodiments, a packaging device includes a contact pad disposed over a substrate, and a passivation layer disposed over the substrate and a first portion of the contact pad. A post passivation interconnect (PPI) line is disposed over the passivation layer and is coupled to a second portion of the contact pad. A PPI pad is disposed over the passivation layer. A transition element is disposed over the passivation layer and is coupled between the PPI line and the PPI pad. The transition element comprises a first side and a second side coupled to the first side. The first side and the second side of the transition element are non-tangential to the PPI pad.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation-in-part of, and claims the benefitof, U.S. patent application Ser. No. 13/894,107 filed on May 14, 2013and entitled, “Packaging Devices and Methods of Manufacture Thereof,”which claims the benefit of U.S. Provisional Application No. 61/776,681filed on Mar. 11, 2013 and entitled “Packaging Devices and Methods ofManufacture Thereof,”, which patent applications are hereby incorporatedherein by reference.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment, as examples. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductive layers of material over asemiconductor substrate, and patterning the various material layersusing lithography to form circuit components and elements thereon.Dozens or hundreds of integrated circuits are typically manufactured ona single semiconductor wafer. The individual dies are singulated bysawing the integrated circuits along scribe lines. The individual diesare then packaged separately, in multi-chip modules, or in other typesof packaging, for example.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area. These smallerelectronic components also require smaller packages that utilize lessarea than packages of the past, in some applications.

One type of smaller packages for semiconductor devices that has beendeveloped are wafer level packages (WLPs), in which integrated circuitsare packaged in packages that typically include a redistribution layer(RDL) or post passivation interconnect (PPI) that is used to fan-outwiring for contact pads of the package so that electrical contacts maybe made on a larger pitch than contact pads of the integrated circuit.WLPs are often used to package integrated circuits (ICs) demanding highspeed, high density, and greater pin count, as examples.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a top view of a portion of a packaging device illustratingsome embodiments of the present disclosure that include a transitionelement having a circular hollow region disposed between a PPI line anda PPI pad.

FIG. 2 illustrates several angles and dimensions of the transitionelement relative to the PPI pad in accordance with some embodiments.

FIGS. 3 and 4 are cross-sectional views of a packaging device inaccordance with some embodiments at various stages of manufacturing.

FIGS. 5 through 7 are top views of a portion of a packaging device inaccordance with other embodiments, wherein the transition element andhollow regions comprise various shapes.

FIG. 8 is a more detailed view of a portion of FIG. 7 in accordance withsome embodiments.

FIGS. 9 through 11 illustrate top views of some embodiments of thepresent disclosure wherein an extension element having hollow regions iscoupled to the PPI pad.

FIG. 12 is a top view of a conductive material coupled to a PPI pad thatincludes a transition element with a hollow region coupled thereto inaccordance with some embodiments.

FIG. 13 is a flow chart illustrating a method of manufacturing apackaging device in accordance with some embodiments.

FIGS. 14 through 16 are top views that illustrate transition elements inaccordance with some embodiments of the present disclosure.

FIG. 17 is a top view illustrating a packaging device that includes anarray of PPI pads in accordance with some embodiments that includes thetransition elements shown in FIGS. 14 through 16 in corners of thearray.

FIG. 18 is a more detailed view of a portion of the packaging deviceshown in FIG. 17 in accordance with some embodiments.

FIG. 19 is a top view illustrating a packaging device that includes anarray of PPI pads in accordance with some embodiments that includes thetransition elements shown in FIGS. 14 through 16 in corner regions ofthe array.

FIG. 20 is a more detailed view of a portion of the packaging deviceshown in FIG. 19 in accordance with some embodiments.

FIG. 21 is a top view illustrating a packaging device that includes anarray of PPI pads in accordance with some embodiments that includes thetransition elements shown in FIGS. 14 through 16 in corner regions andedge regions of the array.

FIG. 22 is a more detailed view of a portion of the packaging deviceshown in FIG. 21 in accordance with some embodiments.

FIG. 23 is a cross-sectional view of a packaging device in accordancewith some embodiments.

FIGS. 24 and 25 are cross-sectional views of a packaging device inaccordance with some embodiments at various stages of manufacturing.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Some embodiments of the present disclosure are related to packagingdevices and methods of manufacture thereof for semiconductor devices.Packaging devices will be described herein that include a transitionelement disposed between a post-passivation interconnect (PPI) line anda PPI pad that provides an area for a wetting region to form when aconductive material is coupled to the PPI pad or when the conductivematerial is re-flowed in a later packaging or manufacturing process,which improves reliability and prevents cracking of the conductivematerial joint.

Referring first to FIG. 1, a top view of a portion 100 of a packagingdevice (e.g., a portion 100 of a packaging device 110 shown in FIGS. 3and 4) in accordance with some embodiments of the present disclosure isillustrated. A cross-sectional view of the packaging device 110 at viewA-A′ is shown in FIG. 3. The packaging device 110 includes a transitionelement 106 having a hollow region 108 disposed between a PPI line 102and a PPI pad 104. The PPI line 102, PPI pad 104, and transition element106 comprise a conductive material and are integral to one another insome embodiments. Only one PPI line 102, PPI pad 104, and transitionelement 106 are shown in the drawings; however, a plurality of PPI lines102, PPI pads 104, and transition elements 106 are formed across asurface of the packaging device 110 and are used for making electricalconnections to a plurality of contact pads 114 disposed over a substrate112. PPI line 102, PPI pad 104, and transition element 106 comprise aredistribution layer (RDL) or other interconnect routing structures ofthe packaging device 110 in some embodiments, for example.

The PPI line 102 is a conductive line that extends over an underlyingcontact pad 114 (see FIG. 3). The PPI line 102 fills an opening in apolymer layer 118 and a passivation layer 116 and forms an electricalconnection with the contact pad 114. The PPI line 102 contacts thetransition element 106, and the transition element 106 contacts the PPIpad 104. The PPI line 102 may have a narrow, wide, or tapered shape. ThePPI line 102 may comprise a substantially constant thickness and width.The PPI line 102 terminates at the transition element 106, and thetransition element 106 terminates at the PPI pad 104; therefore, thebodies of the PPI line 102, transition element 106, and the PPI pad 104may be formed as one piece.

The transition element 106 advantageously prevents solder or othereutectic material of a conductive material (not shown in FIG. 1; seeconductive material 120 shown in FIG. 4) from forming on the PPI line102, to be described further herein. The transition element 106 has asingle hollow region 108 in the embodiments shown in FIG. 1. The hollowregion 108 comprises a cave within the otherwise solid transitionelement 106, for example. In other embodiments, the transition element106 comprises a plurality of hollow regions 108, which will also bedescribed further herein.

The distance between the PPI line 102 and PPI pad 104 comprisesdimension d₁ that comprises about 150 μm or less in some embodiments. Insome embodiments, dimension d₁ comprises about 20 μm to about 150 μm.Dimension d₁ may also comprise other values. For example, in otherembodiments, dimension d₁ is greater than 150 μm. The width of thetransition element 106 is slightly greater than dimension d₁ due to thecurved shape of the PPI pad 104 in some embodiments.

The transition element 106 is a triangular connection comprising a shapeof a triangle having a curved side proximate the PPI pad 104 in theembodiment shown in FIG. 1. The transition element 106 may also compriseother shapes, to be described further herein. The hollow region 108 ispositioned within a central region of the transition element 106 in someembodiments, as shown. The hollow region 108 may also be offset from thecentral region of the transition element 106. The hollow region 108 isspaced apart from an edge of the PPI pad 104 in some embodiments, asillustrated in FIG. 1. The hollow region 108 may be spaced apart fromthe edge of the PPI pad 104 by a few μm, for example. The hollow region108 may also be spaced apart from the PPI pad 104 by other amounts, orthe hollow region 108 may directly contact the edge of the PPI pad 104,as shown in FIG. 2.

Referring again to FIG. 1, the hollow region 108 of the transitionelement 106 comprises a shape of a circle in the embodiment shown;however, the shape of the hollow region 108 may also comprise an oval,triangle, rectangle, square, or polygon, as examples. The hollow region108 may also comprise other shapes. The hollow region 108 comprises awidth comprising dimension d₂ of about 100 μm or less in someembodiments. In some embodiments, dimension d₂ comprises about 55 μm.Dimension d₂ may also comprise other values.

The transition element 106 comprises a minimum width proximate thehollow region 108 comprising dimension d₃, wherein dimension d₃comprises about 15 μm or less in some embodiments, for example.Dimension d₃ comprises a width of a portion of the transition element106 in some embodiments. The PPI line 102 comprises a width comprisingdimension d₄, wherein dimension d₄ comprises about 15 μm in someembodiments, for example. In some embodiments, dimension d₄ comprisesabout 10 μm to about 100 μm, for example. Dimension d₄ may also begreater than or less than 15 μm in some embodiments. Dimension d₃ may begreater than about 15 μm in embodiments wherein dimension d₄ is greaterthan about 15 μm, for example. Dimension d₃ is equal to or less thandimension d₄ in some embodiments of the present disclosure, for example.Dimensions d₃ and d₄ may also comprise other values and other relativevalues. Dimension d₄ is also referred to herein as a first width anddimension d₃ is also referred to herein as a second width (e.g., in someof the claims), wherein the second width is less than or equal to thefirst width, for example. Dimension d₃ being equal to or less thandimension d₄ advantageously ensures that a eutectic material of aconductive material 120 cannot re-flow or wet excessively and reach thePPI line 102 in some embodiments, for example.

The PPI pad 104 comprises a shape of a circle in the embodiment shown.In other embodiments, the PPI pad 104 may comprise the shape of an oval,square, rectangle, or other shapes. The PPI pad 104 comprises a width(which width comprises a diameter in embodiments wherein the PPI pad 104comprises a circular shape) comprising dimension d₅. Dimension d₅comprises about 200 μm in some embodiments, for example. Dimension d₅may also be greater or less than 200 μm depending on the design rule forpackaging device, for example. Dimension d₅ comprises about 180 μm toabout 260 μm in other embodiments. In some embodiments, dimension d₂ ofthe hollow region 108 is about 1/10 to about ⅓ than dimension d₅ of thePPI pad 104. Dimension d₅ is also referred to herein as a first widthand dimension d₂ is also referred to herein as a second width (e.g., insome of the claims), wherein the second width is about 1/10 to about ⅓of the first width. In some embodiments, dimension d₂ is about ¼ ofdimension d₅, for example. In embodiments wherein dimension d₅ is 200μm, dimension d₂ may comprise about 45 to 55 μm, as an example. Inembodiments wherein the transition element 106 comprises a plurality ofhollow regions 108, a total width of the hollow regions 108 may compriseabout ⅓ or less of dimension d₅, as another example.

FIG. 2 illustrates several angles and dimensions of the transitionelement 106 shown in FIG. 1 relative to the PPI pad 104 in accordancewith some embodiments. An angle α₁ between edges where the transitionelement 106 contacts the PPI pad 104 comprises about 130 degrees in someembodiments, and an angle α₂ at a point 109 where the transition element106 contacts the PPI line 102 comprises about 50 degrees in someembodiments, as an example. Angle α₂ is less than about 90 degrees inaccordance with some embodiments. In some embodiments, the transitionelement is substantially triangle-shaped and comprises two sides coupledtogether that form a corner at point 109, wherein the angle α₂ betweenthe two sides at the corner 109 is less than about 90 degrees, forexample.

FIGS. 3 and 4 are cross-sectional views of a packaging device 110 inaccordance with some embodiments at various stages of manufacturing. Tomanufacture the packaging device 110, first, a substrate 112 isprovided. The substrate 112 may comprise silicon, other types of bulksemiconductor material, or other materials, as examples. The substrate112 may include one or more ICs formed thereon, not shown. The IC(s) maycontain active and passive devices, conductive layers, and dielectriclayers according to the electrical design of the IC(s), as examples.

A conductive layer is formed as a contact pad 114 using a patterning anddeposition process over the substrate 112. The contact pad 114 maycomprise aluminum (Al), copper (Cu), tin (Sn), nickel (Ni), gold (Au),silver (Ag), other electrically conductive materials, or multiple layersor combinations thereof, as examples. The contact pad 114 may be formedusing an electrolytic plating or electro-less plating process, forexample. The size, shape, and location of the contact pad 114 are onlyfor illustration purposes. A plurality of the contact pads 114 (notshown) are formed over the surface of the substrate 112, and the contactpads 114 may be of the same size or of different sizes.

A passivation layer 116 may be formed over the surface of the substrate112 and over the top surface of the contact pad 114 for structuralsupport and physical isolation. The passivation layer 116 comprisessilicon nitride (SiN), silicon dioxide (SiO₂), silicon oxynitride(SiON), polyimide (PI), benzocyclobutene (BCB), polybenzoxazole (PBO),other insulating materials, or combinations or multiple layers thereof,as examples. An opening in the passivation layer 116 may be made byremoving a portion of passivation layer 116 using a mask-definedphotoresist etching process to expose a portion of the contact pad 114,while leaving another portion of the contact pad 114 covered.

A polymer layer 118 may be formed on the passivation layer 116,following the contour of the passivation layer 116 and filling a part ofthe opening of the passivation layer 116 over the contact pad 114. Thepolymer layer 118 may not completely fill the opening of the passivationlayer 116 over the contact pad 114; rather, it may be patterned to forman opening to expose a portion of the contact pad 114, while coveringother portions of the contact pad 114. The patterning of the polymerlayer 118 may include photolithography techniques. The polymer layer 118may be formed of a polymer, such as an epoxy, polyimide, BCB, PBO, andthe like, although other relatively soft, often organic, dielectricmaterials may also be used. Spin coating or other commonly usedformation methods may be used to apply the polymer layer 118. Thethickness of the polymer layer 118 may be between about 5 μm and about30 μm, for example. The polymer layer 118 may also comprise otherdimensions.

A conductive material such as a metal is used to form the PPI line 102,PPI pad 104, and transition element 106 over the polymer layer 118,following the contour of the polymer layer 118. The PPI line 102, PPIpad 104, and transition element 106 may have a thickness of less thanabout 30 μm, and may comprise a thickness of about 2 μm to about 10 μmin some embodiments, as examples. The PPI line 102, PPI pad 104, andtransition element 106 may comprise a metal such as Ti, Al, Ni, nickelvanadium (NiV), Cu, or combinations or multiple layers thereof, asexamples. The PPI line 102, PPI pad 104, and transition element 106 maybe formed using electrolytic plating, electro-less plating, sputtering,chemical vapor deposition methods, and/or photolithography processes,for example. The PPI line 102, PPI pad 104, and transition element 106may comprise a single layer or multiple layers using an adhesion layerof Ti, TiW, Cr, or other materials, for example. The PPI line 102, PPIpad 104, and transition element 106 may also comprise other materialsand dimensions, and may be formed using other methods. The substrate 112is connected to a number of PPI lines 102, PPI pads 104, and transitionelements 106 which may electrically connect to the contact pads 114 ofthe substrate 112, for example.

In some embodiments, a blanket coating of conductive material may beformed over the polymer layer 118 and the exposed portion of the contactpad 114, and the conductive material is patterned using lithography,e.g., by forming a layer of photoresist (not shown) over the conductivematerial, patterning the photoresist, and using the photoresist as anetch mask during an etch process for the conductive material, formingthe conductive material into the desired patterns and shapes of the PPIlines 102, PPI pads 104, and transition elements 106. The layer ofphotoresist is then removed. In other embodiments, a seed layer (alsonot shown) is formed over the polymer layer 118 and exposed portion ofthe contact pad 114, and a layer of photoresist is formed over the seedlayer. The photoresist is patterned with the desired patterns and shapesof the PPI lines 102, PPI pads 104, and transition elements 106. Theconductive material is then plated onto the seed layer through thepatterns in the photoresist. The photoresist is removed, and the seedlayer is removed from over the polymer layer 118. Other methods may alsobe used to form the PPI lines 102, PPI pads 104, and transition elements106. In some embodiments, the PPI lines 102, PPI pads 104, andtransition elements 106 are simultaneously formed in a single step.

A solder flux (not shown) may be applied to the PPI line 102, PPI pad104, and transition element 106 in some embodiments to assist in theflow of the solder, such that a subsequently formed conductive material120 shown in FIG. 4 makes good physical and electrical contact with thePPI pad 104. The flux may be applied by brushing, spraying, a stencil,or other methods, as examples. The flux generally has an acidiccomponent that removes oxide barriers from the solder surfaces, and anadhesive quality that helps to prevent an integrated circuit from movingon the substrate surface during the packaging process.

Referring next to FIG. 4, a conductive material 120 is formed over thePPI pad 104. The PPI pad 104 is used to connect to the conductivematerial 120, forming a connection between the contact pad 114 to theconductive material 120 by way of the PPI line 102, the transitionelement 106, and the PPI pad 104. The conductive material 120 may have alarger diameter or diameter than the diameter or width comprisingdimension d₅ of the PPI pad 104.

The conductive material 120 comprises a eutectic material and maycomprise a solder bump or a solder ball, as examples. The use of theword “solder” herein includes both lead-based and lead-free solders,such as Pb—Sn compositions for lead-based solder; lead-free soldersincluding InSb; tin, silver, and copper (“SAC”) compositions; and othereutectic materials that have a common melting point and form conductivesolder connections in electrical applications. For lead-free solder, SACsolders of varying compositions may be used, such as SAC 105 (Sn 98.5%,Ag 1.0%, Cu 0.5%), SAC 305, and SAC 405, as examples. Lead-freeconductive materials 120 such as solder balls may be formed from SnCucompounds as well, without the use of silver (Ag). Lead-free solderconnectors may also include tin and silver, Sn—Ag, without the use ofcopper. The conductive material 120 may be one among an array of theconductive materials 120 formed as a grid, referred to as a “ball gridarray” or “BGA”. The conductive materials 120 may also be arranged inother shapes. The conductive material 120 comprises a conductive ballhaving a shape of a partial sphere in some embodiments. The conductivematerial 120 may also comprise other shapes. The conductive material 120may also comprise non-spherical conductive connectors, for example.

The conductive material 120 is attached in some embodiments using asolder ball drop process. During the conductive material 120 mountingprocess, or after the conductive material mounting process, the eutecticmaterial of the conductive material 120 may be re-flowed, and a portionof the conductive material 120 flows over a portion of the transitionelement 106 in some embodiments, forming a wetting region 122. In someembodiments, the wetting region 122 is formed over the entire transitionelement 106, not shown. In other embodiments, the wetting region 122 isnot formed. Advantageously, the inclusion of the transition element 106,the hollow region 108 of the transition element 106, and the dimensionsand shape of the hollow region 108 and transition element 106 result inpreventing or reducing an amount of wetting region formation over thePPI line 102. In some embodiments, the wetting region 122 is not formedon the PPI line 102, for example.

A molding compound 124 is then formed over the PPI line 102, PPI pad104, and transition element 106 and exposed portions of the polymerlayer 118 in some embodiments, also shown in FIG. 4. A top portion ofthe molding compound 124 may be recessed so that a top portion of theconductive material 120 is exposed. An amount of the molding compound124 applied may also be controlled so that the top portion of theconductive material 120 is exposed. A molding compound clamp may beapplied during a curing process and a plasma treatment process of themolding compound 124 in some embodiments, for example.

In some embodiments, the transition element 106 comprises a plurality ofhollow regions 108, as shown in FIGS. 5, 6, 7, 9, 10, and 11 in a topview. The hollow regions 108 may comprise the shape of a circle, anoval, a triangle, a triangle with a curved side or a curved corner, arectangle, a rectangle with a curved side or a curved corner, a square,a square with a curved side or a curved corner, a polygon, a polygonwith a curved side or a curved corner, a fragment of an annulus, othershapes, or combinations thereof, as examples.

In some embodiments, the transition element 106 comprises a plurality ofconjugation lines 130. The plurality of conjugation lines 130 is coupledbetween the PPI line 102 and the PPI pad 104. For example, FIGS. 5through 7 are top views of a portion 100 of a packaging device inaccordance with other embodiments, wherein the transition element 106and hollow regions 108 and 108′ comprise various shapes. In FIG. 5, theplurality of conjugation lines 130 is coupled between the PPI line 102and the PPI pad 104 at a plurality of different angles with respect tothe PPI line 102. Each angle is different from the other angles in theembodiment shown. Each of the conjugation lines 130 is not parallel tothe PPI line 102. The hollow regions 108 comprise a shape of a trianglewith a curved side, due to the curved side of the PPI pad 104. Theconjugation lines 130 comprise a width comprising dimension d₃, whereindimension d₃ is less than or equal to the width of the PPI line 102comprising dimension d₄, as described for the previous embodiments.

In some embodiments, the plurality of conjugation lines 130 is coupledbetween the PPI line 102 and the PPI pad 104 at a plurality of differentangles, and at least one of the plurality of conjugation lines 130 ispositioned parallel to the PPI line 102. For example, in FIG. 6, some ofthe plurality of conjugation lines 130 are parallel to the PPI line 102.The two center conjugation lines 130 are positioned parallel to the PPIline 102. The other conjugation lines 130 are positioned between the PPIline 102 and the PPI pad 104 at different angles with respect to the PPIline 102. One hollow region 108 comprises a shape of a rectangle, andthe other hollow regions 108′ comprise a shape of a polygon with acurved side and a curved corner 134. Four conjugation lines 130 areshown in FIGS. 5 and 6; however, other numbers of conjugation lines 130may also be included in the transition elements 106.

In FIG. 7, each of the plurality of conjugation lines 130 is disposedsubstantially parallel to the PPI line 102. The transition element 106further includes a connection line 136 disposed substantiallyperpendicular to the PPI line 102. The connection line 136 is coupled tothe PPI line 102. Each of the plurality of conjugation lines 130 iscoupled between the connection line 136 and the PPI pad 104. Theconjugation lines 130 are coupled to the connection line 136 at an angleα₃, wherein angle α₃ is not an acute angle. Angle α₃ is substantiallyabout 90 degrees in some embodiments, for example. The hollow regions108 comprise a shape of a rectangle with a curved side or a square witha curved side. Because the conjugation lines 130 are disposed at anon-acute angle α₃, wetting regions form on the conjugation lines 130and are resistant to flowing further onto the connecting line 136, andthus resist flowing even further onto the PPI line 102. FIG. 8 is a moredetailed view of a portion of FIG. 7, illustrating the contact points ofthe conjugation lines 130 with the PPI pad 104. The dimension d_(x)comprises about 1 μm or greater in some embodiments, for example. Inother embodiments, dimension d_(x) comprises about 1 μm to about 2 μm,as another example. In some embodiments, the design of dimension d_(x)is selected to avoid an acute angle of the conjugation lines 130, inorder to achieve reduced stress concentration and an improvedmanufacturing process.

FIGS. 9 through 11 illustrate top views of embodiments of the presentdisclosure wherein an extension element 140 having hollow regions 108′is coupled to the PPI pad 104. For example, in FIG. 9, the embodimentshown in FIG. 7 is illustrated with the inclusion of an extensionelement 140. The PPI pad 138 a has a first side 138 a and a second side138 b opposite the first side 138 a. The transition element 106 iscoupled to the first side 138 a of the PPI pad 104. The packaging devicefurther includes an extension element 140 coupled to the second side 138b of the PPI pad 104. The extension element 140 includes a plurality ofextension lines 141 coupled on one end to the second side 138 b of thePPI pad 104 and coupled at the opposite end to a connecting line 136′.The extension element 140 comprises a hollow region 108′. In someembodiments, the extension element 140 comprises a plurality of hollowregions 108′. The hollow regions 108′ have a shape of a rectangle with acurved side or a square with a curved side. The extension element 140 isformed simultaneously with the formation of the PPI lines 102, PPI pads104, and transition elements 106 using the same method and comprisingthe material and thickness, in some embodiments.

In some embodiments, a portion of the extension element 140 hassubstantially the same shape as the transition element 106. For example,a portion of the transition element 106 may have a first shape, and aportion of the extension element 140 may have a second shape, whereinthe second shape is substantially the same as the first shape, in someembodiments. The extension element 140 may also have a different shapethan the transition element 106, in other embodiments. The extensionlines 141 and connecting line 136′ comprise a width comprising dimensiond₃, wherein dimension d₃ is less than or equal to the width of the PPIline 102 comprising dimension d₄, in some embodiments.

In some embodiments, the extension element 140 further includes aportion that is coupled to a third side 138 c and a fourth side 138 d ofthe PPI pad 104, as shown at 140′ in FIG. 9. The third side 138 c of thePPI pad 104 is substantially perpendicular to the first side 138 a ofthe PPI pad 104, and the fourth side 138 d of the PPI pad 104 isopposite the third side 138 c of the PPI pad 104. A portion 140′ of theextension element 140 coupled to the third side 138 c and the fourthside 138 d of the PPI pad 104 is coupled to the transition element 106,for example, by an extension line 141. The extension element 140′includes a hollow region 108″ comprising a shape of a rectangle with acurved side. A more detailed view of a portion of the transition element106 is shown in FIG. 8.

The extension elements 140 or 140/140′ provide additional wettingregions for the flow of eutectic material of the conductive material120, further preventing wetting onto the PPI line 102. Furthermore, thePPI line 102 may be placed closer to the PPI pad 104 in someembodiments. For example, dimension d₆ comprising a length of a shortestconjunction line 130 proximate the PPI line 102 comprises about 10 μm orgreater in some applications. Dimension (d₃+d₆) is less than dimensiond₁ for the embodiments shown in FIG. 1, in some embodiments, forexample. Dimension d₆ may also comprise other values.

FIG. 10 illustrates a top view of some embodiments wherein thetransition element 106 and the extension element 140/140′ comprise aring member 144 coupled to the PPI line 102 and a plurality of radialmembers 142 coupled between the PPI pad 104 and the ring member 144. Thering member 144 comprises a shape of an annulus having a thicknesscomprising dimension d₃. Dimension d₃ is less than or equal to the widthof the PPI line 102 comprising dimension d₄, in some embodiments. Theradial members 142 comprise a length comprising dimension d₇ and a widthcomprising dimension d₈. Dimension d₇ comprises about 20 μm anddimension d₈ comprises about 10 to about 20 μm in some embodiments, asexamples. The outside diameter of the ring member 144 comprisesdimension d₉, wherein dimension d₉ comprises about 240 μm in someembodiments. Dimensions d₇, d₈, and d₉ may also comprise other values.The hollow regions 108 each comprise a shape of a fragment of an annulusin these embodiments.

The embodiments shown in FIG. 10 also include a triangle member 146coupled between the PPI line 102 and the ring member 144. The trianglemember 146 comprises a width comprising dimension d₁₀, wherein dimensiond₁₀ comprises about 40 μm in some applications, for example. Dimensiond₁₀ may also comprise other values. The triangle member 146 comprises aportion of the transition element 106 in some embodiments, for example.The triangle member 146 may also be included in the other embodimentsdescribed herein, not shown in the drawings.

FIG. 11 is a top view of some embodiments wherein the transition element106 and extension element 140/140′ comprise a grid shape. The pluralityof conjugation lines 130 of the transition element 106 that are parallelto the PPI line 102 comprises a plurality of first conjugation lines130. The transition element 106 further comprises a plurality of secondconjugation lines 130′. The plurality of second conjugation lines 130′are disposed substantially perpendicular to the PPI line 102. Each ofthe plurality of second conjugation lines 130′ is coupled to the PPI pad104 or to one of the plurality of first conjugation lines 130. At theedges, the plurality of second conductive lines 130′ is coupled to theextension line 141. Likewise, the extension element 140/140′ includes aplurality of extension lines 141 that are parallel to the PPI line 102and a plurality of second extension lines 141′ that are substantiallyperpendicular to the PPI line 102. Each of the plurality of secondextension lines 141′ is coupled to the PPI pad 104 or to one of theplurality of first extension lines 141. A more detailed view of aportion of the transition element 106 is shown in FIG. 8.

FIG. 12 is a top view of a conductive material 120 coupled to a PPI pad104 that includes a transition element 106 with a hollow region 108coupled thereto in accordance with some embodiments. The wetting region122 does not extend past the hollow region 108. The wetting region 122is not formed on the PPI line 102. Experimental results for a PPI pad104 having a diameter comprising dimension d₅ of about 200 μm showed theformation of a conductive material 120 comprising a solder ball having adiameter comprising dimension d₁₁ of about 300 μm, a ball height ofabout 205 μm, and a wetting region 122 having a necking width comprisingdimension d₁₂ of about 34 μm, as an example.

FIG. 13 is a flow chart 150 illustrating a method of manufacturing apackaging device 110 (see also FIG. 4) in accordance with someembodiments of the present disclosure. In step 152, a contact pad 114 isformed over a substrate 112. In step 154, a passivation layer 118 isformed over the substrate 112 and a first portion of the contact pad 114yet leaving a second portion of the contact pad 114 exposed. In step156, a PPI line 102 is formed over the passivation layer 118 coupled tothe second portion of the contact pad 114. In step 158, a transitionelement 106 is formed over the passivation layer 118 coupled to the PPIline 102, the transition element comprising a hollow region 108. In step160, a PPI pad 104 is formed over the passivation layer 118 coupled tothe transition element 106.

In some embodiments of the present disclosure, the transition elements106 between a PPI line 102 and a PPI pad 104 are substantiallytangential to sides of the PPI pads 104 (see the embodiments illustratedin FIGS. 1, 2, 5, and 6). In other embodiments, the transition elements106 comprise sides that are not tangential to sides of the PPI pads 104,to be described further herein.

For example, FIGS. 14 through 16 illustrate some embodiments of thepresent disclosure wherein a transition element 106 comprises an angleα₂ of less than about 90 degrees with respect to a PPI line 102. Thetransition element 106 also comprises sides 162 a and 162 b that arenon-tangential to the PPI pad 104. Top views of portions 100 ofpackaging devices 110 (see packaging devices 110 shown in FIGS. 17, 19,21, and 23 through 25) are shown in FIGS. 14 through 16.

The transition element 106 comprises a first side 162 a, a second side162 b, and a third side 162 c, as shown in FIG. 14. The second side 162b is coupled to the first side 162 a at one end of the second side 162b. The second side 162 b is coupled to the third side 162 c at anopposite end of the second side 162 b. The third side 162 c is coupledto both the first side 162 a and the second side 162 b at one end of thethird side 162 c and at an opposite end of the third side 162 c. Thefirst side 162 a and the second side 162 b of the transition element 106are substantially straight, and the third side 162 c is curved. Thethird side 162 c of the transition element 106 is coupled to the PPI pad104 and is curved proximate the PPI pad 104 in some embodiments, forexample.

The non-tangential transition elements 106 comprise a bird's beak designin some embodiments that comprises about a 70 degree angle proximate thePPI line 102.

The first side 162 a and the second side 162 b of the transition element106 are non-tangential to the PPI pad 104. For example, in FIG. 14,tangential lines 164 a and 164 b from the PPI line 102 to the PPI pad104 are illustrated in phantom. Rather than being tangential to the PPIpad 104, the sides 162 a and 162 b of the transition element 106 are nottangential (e.g., non-tangential) to the PPI pad 104 and lie within theillustrated tangential lines 164 a and 164 b.

The PPI line 102 coupled between the underlying contact pad 114 and thetransition element 106 comprises a meandering path in a top view in someembodiments, also illustrated in FIG. 14. The PPI line 102 may also besubstantially straight and may meander in other directions and shapes.

An angle α₂ between the first side 162 a of the transition element 106and the second side 162 b of the transition element 106 proximate thePPI line 102 comprises about 90 degrees or less in some embodiments. Theangle α₂ comprises about 40 degrees to about 85 degrees in someembodiments, for example. In other embodiments, the angle α₂ comprisesabout 65 degrees to about 75 degrees, as another example. In someembodiments, the angle α₂ between the substantially straight sides 162 aand 162 b of the transition element 106 comprises about 70 degrees. Theangle α₂ between the sides 162 a and 162 b may also comprise otherdimensions.

FIG. 14 also illustrates that the transition element 106 comprises asubstantially triangular shape in some embodiments. The transitionelement 106 may comprise a substantially triangular shape with onecurved side, i.e., the third side 162 c. In some embodiments, a cornerof the triangular shaped transition element 106 may point towards acenter or a neutral point (NP) of an array 165 (not shown in FIG. 14;see FIG. 17) of PPI pads 104, to be described further herein. The bird'sbeak design of the transition element 106 is centripetally positionedwithin the array 165 in some embodiments, for example.

FIG. 15 illustrates some additional relative dimensions of the PPI pad104, transition element 106, and PPI line 102 in accordance with someembodiments, wherein the transition element 106 comprises first andsecond sides 162 a and 162 b that are non-tangential to the PPI pad 104.Dimensions d₁ and d₄ have been previously described herein (see FIG. 1,for example). Dimension d₁₃ comprises a distance between the PPI line102 and a center of the PPI pad 104. Dimension d₁₃ comprises about 100μm to about 300 μm in some embodiments, for example. In otherembodiments, dimension d₁₃ comprises about 110 μm to about 280 μm, asanother example. These values for dimension d₁₃ are sufficient toprovide enhanced mechanical strength and to reinforce reliability of apackaging device 110 by avoiding or preventing cracks at the necks ofthe PPI pads 104, for example. Dimension d₁₃ may also comprise othervalues. A widest width of the third side 162 c of the transition element106 proximate the PPI pad 104 comprises a dimension d₁₄, whereindimension d₁₄ comprises about 150 μm, as an example. Dimension d₁₄ maycomprise about ⅓ to about ⅔ of a width comprising dimension d₅ of thePPI pad 104 in some embodiments, for example. Dimension d₁₄ may alsocomprise other values and/or other relative dimensions to the PPI pad104.

FIG. 16 illustrates a top view of a transition element 106 thatcomprises the first side 162 a, the second side 162 b, and the thirdside 162 c. FIG. 16 also illustrates the angle α₂ between the first side162 a and second side 162 b of the transition element 106, and thelength and width comprising dimension d₁ and d₁₄, respectively, of thetransition element 106.

The transition elements 106 illustrated in FIGS. 14 through 16 mayinclude a hollow region 108 as described for the embodiments shown inFIGS. 1 through 13. In other embodiments, the transition elements 106illustrated in FIGS. 14 through 16 may not include a hollow region 108,as illustrated in FIGS. 14 through 16. Likewise, the transition elements106 shown in FIGS. 14 through 16 may include extension elements and/orconjugation lines, not shown. In other embodiments, the transitionelements 106 illustrated in FIGS. 14 through 16 may not includeextension elements and/or conjugation lines, as illustrated in FIGS. 14through 16.

The transition elements 106 that include the first and second sides 162a and 162 b having an angle α₂ between them and that are non-tangentialto the PPI pads 104 may be included in an entire array of PPI pads 104of a packaging device 110 in some embodiments. In other embodiments, thetransition elements 106 that include the first and second sides 162 aand 162 b having an angle α₂ between them and that are non-tangential tothe PPI pads 104 may be included in a portion of an array of PPI pads104 of a packaging device 110, to be described further herein withreference to FIGS. 17 through 22.

Some positions of PPI pads 104 within an array of PPI pads 104 may bemore susceptible to breakage and fracture in some embodiments, such asin larger packaging types having a large number of contact pads 114 andPPI pads 104. PPI pads 104 in corners 166 a, 166 b, 166 c, and 166 d ofan array 165 of the PPI pads 104 of a packaging device 110 may be moresusceptible to breakage, for example, as shown in FIG. 17 in a top view.The transition elements 106 having non-tangential sides 162 a and 162 bmay be implemented in such packaging devices 110, to reduce or eliminatebreakage and increase yields.

For example, the top view shown in FIG. 17 illustrates a packagingdevice 110 that includes an array 165 of PPI pads 104 and 104′ inaccordance with some embodiments of the present disclosure. Thetransition elements 106 shown in FIGS. 14 through 16 are included in thecorners 166 a, 166 b, 166 c, and 166 d of the array 165 and are coupledto the PPI pads 104 (e.g., shown collectively at 104/106), in someembodiments. Other regions 167 of the array 165 may include transitionelements 106′ with other shapes and other relative shapes to the PPIpads 104′. The transition elements 106 that are non-tangential to PPIpads 104 are only included in the corners 166 a, 166 b, 166 c, and 166 dof the array 165 in the embodiments shown in FIG. 17; the other regions167 of the array 165 may include tangential transition elements 106′ toPPI pads 104′.

For example, the corners 166 a, 166 b, 166 c, and 166 d of the array 165shown in FIG. 17 include the transition elements 106 described hereinwith reference to FIGS. 14 through 16 coupled to the PPI pads 104. Thetransition elements 106 and PPI pads 104 are labelled collectively as104/106 in FIG. 17. The transition elements 106 and PPI pads 104 arealso referred to herein as first transition elements 106 and first PPIpads 104, respectively. Likewise, the PPI lines 102 and contact pads 114for the first transition elements 106 are also referred to herein asfirst PPI lines 102 and first contact pads 114, respectively.

Other regions 167 of the array 165 may include transition elements 106′that have substantially straight sides and that are substantiallytangential to the PPI pads 104′, as illustrated in a more detailed viewin FIG. 18. The transition elements 106′ and PPI pads 104′ are labelledcollectively as 104′/106′ in FIG. 17. The angle α₂′ between thesubstantially straight sides of the transition elements 106′ comprisesabout 90 degrees in some embodiments, for example. The transitionelements 106′ and PPI pads 104′ in regions 167 are also referred toherein as second transition elements 106′ and second PPI pads 104′,respectively. Likewise, the PPI lines 102′ and contact pads 114′ for thesecond transition elements 106′ are also referred to herein as secondPPI lines 102′ and second contact pads 114′, respectively.

In some embodiments, an analysis of a distance from a neutral positionNP to a PPI pad 104 or 104′ may be made to determine if a higherlikelihood of cracking or breaking of connections to the PPI pads 104 or104′ exists, in order to determine which regions of the array 165 of PPIpads 104 and 104′ would benefit from utilizing the transition elements106 illustrated in FIGS. 14 through 16 and described herein. Forexample, a desired value of a distance to the neutral point (DNP1) forPPI pads of the array 165 may be determined, and a measurement orestimate of the actual distances to the neutral point (DNP) to each ofthe PPI pads 104 and 104′ may then be made. The neutral position NP maycomprise a center of the array 165 of PPI pads 104 and 104′ in someembodiments. The NP may also be located elsewhere in the array 165. PPIpads 104 having a DNP measurement or estimate that is greater than thepredetermined desired value of the distance to the neutral point, DNP1,may be designed to be connected to underlying contact pads 114 using thetransition elements 106 described herein with reference to FIGS. 14through 16, which have an angle α₂ of about 70 degrees and have sidesthat are non-tangential to the PPI pads 104 in some embodiments, forexample. PPI pads 104′ in region 167 may have a DNP measurement orestimate that is less than or equal to DNP1, and the packaging device110 may be designed such that the PPI pads 104′ are connected tounderlying contact pads 114′ using the transition elements 106′ shown inFIG. 18 which have an angle α₂′ of about 90 degrees and aresubstantially tangential to the PPI pads 104′ in some embodiments.

Each of the transition elements 106 and 106′ comprises a substantiallytriangular shape in some embodiments. A corner of each of the triangularshaped transition elements 106 in the corner regions 166 a, 166 b, 166c, and 166 d points towards a center or an NP of the array 165 of PPIpads 104 and 104′ in some embodiments. For example, FIG. 14 illustratessome embodiments wherein a lower corner 166 a of an array 165 shown inFIG. 17 includes a transition element 106 coupled to a PPI pad 104. Acorner of the transition element 106 at the intersection of the firstside 162 a and the second side 162 b points towards the NP shown in FIG.17, e.g., the corner of the transition element 106 points towards theupper right of the array 165. Likewise, transition elements 106 may bepositioned so that corners of the transition elements 106 at the firstside 162 a and second side 162 b intersections in the other corners 166b, 166 c, and 166 d of the array 165 point towards the NP.

In some of the embodiments shown in FIG. 17, only the corners 166 a, 166b, 166 c, and 166 d of the array 165 include the non-tangentialtransition elements 106 shown in FIGS. 14 through 16. In otherembodiments, other regions of the array 165 of PPI pads 104 and/or 104′than the corners 166 a, 166 b, 166 c, and 166 d may also include thenon-tangential transition elements 106 shown in FIGS. 14 through 16, asillustrated in FIGS. 19 and 21. For array 165 designs that arerelatively large and/or that have a lower DNP1, the transition elements106 that are non-tangential to PPI pads 104 and include a 70 degreeangle α₂ may be implemented over a greater surface area of the array 165or in additional regions of the array 165, for example.

FIG. 19 is a top view illustrating a packaging device 110 comprising anarray 165 of PPI pads 104 and 104′ in accordance with some embodimentsthat includes the non-tangential transition elements 106 shown in FIGS.14 through 16. Corner regions 168 a, 168 b, 168 c, and 168 d include thetransition elements 106 described herein coupled to the PPI pads 104,illustrated at 104/106. The other regions 167 of the array 165 includetransition elements 106′ coupled to the PPI pads 104′, illustrated at104′/106′, as described for FIG. 17 and as illustrated in more detail inFIG. 18. The DNP1 shown in FIG. 19 may be smaller than the DNP1 shown inFIG. 17, or the packaging device 110 and/or array 165 shown in FIG. 19may be larger than the packaging device 110 and/or array 165 shown inFIG. 17, as examples. A cross-sectional view of the packaging device 110at 23-23′ is shown in FIG. 23, which will be described further herein.

FIG. 20 is a more detailed view of a portion of the packaging device 110shown in FIG. 19 in accordance with some embodiments. An upper rightcorner region 168 c of the array 165 shown in FIG. 19 is illustrated inFIG. 20. Corners of the transition elements 106 at the intersections ofthe first sides 162 a and the second sides 162 b (not labelled in FIG.20; see FIG. 14) point towards the NP shown in FIG. 19; e.g., thecorners of the transition elements 106 point towards the lower left ofthe array 165 towards the NP. Likewise, transition elements 106 in theother corner regions 168 a, 168 b, and 168 d may be positioned so thatcorners of the transition elements 106 at the first side 162 a andsecond side 162 b intersections point towards the NP.

The corner regions 168 a, 168 b, 168 c, and 168 d illustrated in FIGS.19 and 20 each comprise three PPI pads 104 and three transition elements106. The corner regions 168 a, 168 b, 168 c, and 168 d may also compriseother numbers of PPI pads 104 and transition elements 106. For example,FIG. 21 is a top view illustrating a packaging device 110 that includesan array 165 of PPI pads 104 and 104′ in accordance with someembodiments that includes the transition elements 106 shown in FIGS. 14through 16. The corner regions 168 a, 168 b, 168 c, and 168 d are largerthan in FIG. 19 and each include nine PPI pads 104 and nine transitionelements 106. Region 167 of the array 165 includes PPI pads 104′ andtransition elements 106′ that are tangential to the PPI pads 104′, asdescribed for the other embodiments and as shown in more detail in FIG.18.

The transition elements 106 shown in FIGS. 14 through 16 are alsoincluded in edge regions 170 a, 170 b, 170 c, and 170 d in theembodiments shown in FIG. 21. The value of DNP1 in FIG. 21 is less thanthe value of DNP1 in FIGS. 17 and 19, and/or the array 165 or packagingdevice 110 is larger in FIG. 21 than in FIGS. 17 and 19, for example. Asin the other embodiments, corners of the transition elements 106 may bepositioned to point towards the NP.

FIG. 22 is a more detailed view of a portion of the packaging device 110shown in FIG. 21 in accordance with some embodiments. A PPI pad 104 andtransition element 106 in the lower edge region 170 a is shown, whereinthe PPI pad 104 and transition element 106 are disposed in asubstantially central region of the lower edge region 170 a. A corner ofthe transition element 106 at the intersections of the first sides 162 aand the second sides 162 b (not shown in FIG. 22; see FIG. 14) pointstowards the NP shown in FIG. 21; e.g., the corner of the transitionelement 106 points towards the upper part of the array 165 towards theNP. Likewise, the transition elements 106 in the other edge regions 170b, 170 c, and 170 d and the corner regions 168 a, 168 b, 168 c, and 168d may be positioned so that corners of the transition elements 106 atthe first side 162 a and second side 162 b intersections point towardsthe NP.

FIG. 23 is a cross-sectional view of a packaging device 110 inaccordance with some embodiments. The packaging device 110 may comprisea WLP that includes fan-out structures in some embodiments, for example.The packaging device 110 may also comprise other types of packages.

The packaging device 110 may include an adhesive 172 such as a glue,tape, or other materials with adhesive properties. An insulatingmaterial 174 is formed over the adhesive 172. The insulating material174 may comprise PBO, PI, BCB, solder resist (SR), other materials, or acombination or multiple layers thereof, for example. The insulatingmaterial 174 may also comprise other materials. Layers 174 and 172comprise a glue/polymer base buffer layer in some embodiments, forexample.

A plurality of through-vias 178 is disposed over the insulating material174. Conductive features (not labelled) may be formed over theinsulating material 174, and some of the through-vias 178 are coupled tothe conductive features, for example. The through-vias 178 andconductive features may be formed using a plating process, and a seedlayer may be included for the plating process. The through-vias 178 andconductive features may comprise copper, a copper alloy or othermaterials, as examples. The conductive features coupled to theinsulating material 174 and the through-vias 178 may comprise a part ofa RDL or a PPI structure in some embodiments. The conductive featuresmay comprise conductive lines, vias, contact pads, and/or other types offeatures. The conductive features comprise conductive features of a backside RDL in some embodiments.

The through-vias 178 may comprise a width of about 20 μm to about 300 μmin a top view. The through-vias 178 may comprise a circular, oval,square, rectangular, or polygon shape in the top view, as examples. Thethrough-vias 178 may also comprise other shapes and dimensions. Thethrough-vias 178 provide vertical electrical connections for thepackaging device 110 in some embodiments, for example. The conductivefeatures coupled to the lower ends of the through-vias 178 may comprisean under-ball metallization (UBM) structure in some embodiments.

The packaging device 110 includes an integrated circuit die 176 disposedin a die mounting region disposed between the through-vias 178. Theintegrated circuit die 176 may be coupled to some of the conductivefeatures of the back side RDL in some embodiments, for example. Oneintegrated circuit die 176 is shown in FIG. 23; however, the packagingdevice 110 may include two or more integrated circuit dies 176, or anintegrated circuit die 176 may not be included in the packaging device110. The integrated circuit die or dies 176 may include a substrate andactive regions that contain circuitry disposed within the substrate. Theintegrated circuit dies 176 may also include interconnect structuresand/or contact pads formed thereon. For example, on a lower side of theintegrated circuit die 176 shown in FIG. 23, contact pads 179 aredisposed within an insulating material 180. An interconnect structure182 comprising conductive lines and vias is formed on an upper side ofthe integrated circuit die 176 in FIG. 23, for example. Contact pads 184are formed on portions of the interconnect structure 182. The integratedcircuit die or dies 176 may also include other features and/or elements.

A molding material 181 is formed around the integrated circuit dies 176and the through-vias 178. The molding material 181 comprises a moldingcompound comprised of an insulating material, such as an epoxy, a fillermaterial, a stress release agent (SRA), an adhesion promoter, othermaterials, or combinations thereof, as examples.

An interconnect structure 186 is formed over the molding material 181,the plurality of integrated circuit dies 176, and the plurality ofthrough-vias 178. The interconnect structure 186 comprises one or moreconductive feature layers and one or more insulating material layers.The interconnect structure 186 comprises an RDL or PPI structure in someembodiments. The conductive feature layers of the interconnect structure186 may comprise conductive lines, conductive vias, and/or contact padscomprised of copper, copper alloys, or other materials, as examples. Theinsulating material layers of the interconnect structure 186 maycomprise silicon dioxide, low dielectric constant (k) materials having ak value less than silicon dioxide, passivation materials, otherinsulating materials, or multiple layers or combinations thereof, asexamples. The interconnect structure 186 provides horizontal electricalconnections for the packaging device 110.

At least a top portion of the interconnect structure 186 includes thesubstrate 112, the contact pads 114, the passivation layer 116, thepolymer layer 118, the PPI lines 102, the transition elements 106, andthe PPI pads 104 described herein. These elements are not labelled inFIG. 23; see FIG. 3 and FIG. 24. In FIG. 23, corner regions 168 a and168 b of the array 165 shown in FIG. 19 are illustrated, for example.

To form the packaging device 110 shown in FIG. 23, one or more carriersmay be used. For example, a carrier, not shown, may be provided. Thecarrier may comprise a carrier wafer or strip, as examples. The carriermay comprise glass, a semiconductor material, or other materials. Theadhesive 172 is applied to the carrier, and the overlying layers areformed over the adhesive 172. Or, the carrier may be provided, the upperinterconnect structure 186 may be formed over the carrier, and theunderlying material layers may be sequentially formed over theinterconnect structure 186 in a reverse order.

A plurality of connectors 120 is then formed over the interconnectstructure 186 that are coupled to each of the PPI pads 104, as describedfor FIG. 4 herein and also shown in FIG. 25. The connectors 120 may beformed using a ball drop process or other process. A test may beperformed on the connectors 120 after the ball drop process in someembodiments. The packaging device 110 may then be used to package asemiconductor device such as an integrated circuit die, a plurality ofintegrated circuit dies, or partially packaged dies, as examples, usingthe contacts pads on the lower side of the packaging device 110 that arecoupled to the through-vias 178 shown in FIG. 23.

FIGS. 24 and 25 are cross-sectional views of a packaging device 110 inaccordance with some embodiments at various stages of manufacturing.Similar views of packaging devices are shown in FIGS. 24 and 25 thatwere shown in FIGS. 3 and 4, for example. The transition regions 108 donot include hollow regions 108 in the embodiments shown in FIGS. 24 and25. In other embodiments, the transition regions 108 shown and describedfor the embodiments illustrated in FIGS. 14 through 25 may also includehollow regions 108 described herein with reference to FIGS. 1 through13. The hollow regions 108 may comprise a shape such as a circle, anoval, a triangle, a triangle with a curved side or a curved corner, arectangle, a rectangle with a curved side or a curved corner, a square,a square with a curved side or a curved corner, a polygon, a polygonwith a curved side or a curved corner, a fragment of an annulus, or acombination thereof, as examples.

Some embodiments of the present disclosure include packaging devices110. Some embodiments include methods of manufacturing the packagingdevices 110 described herein.

For example, referring to FIG. 24, in accordance with some embodiments,a method of manufacturing a packaging device 110 includes forming acontact pad 114 over a substrate 112, and forming a passivation layer116 over the substrate 112 and a first portion of the contact pad 114(e.g., the edge regions of the contact pads 114) yet leaving a secondportion of the contact pad 114 exposed (e.g., the central regions of thecontact pads 114). The method includes forming a PPI line 102, atransition element 106, and a PPI pad 104 over the passivation layer116, wherein the PPI line 102 is coupled to the second portion of thecontact pad 114, wherein the transition element 106 is coupled to thePPI line 102 and comprises a substantially triangular shape, wherein anangle α₂ of two sides 162 a and 162 b (see FIG. 16) of the transitionelement 106 comprises about 70 degrees proximate the PPI line 102, andwherein the PPI pad 104 is coupled to the transition element 106.Forming the PPI line 102, the transition element 106, and the PPI pad104 comprises forming a transition element 106 wherein each of the twosides 162 a and 162 b of the transition element 106 is non-tangential tothe PPI pad 104.

In some embodiments, forming the contact pad 114 comprises forming afirst contact pad 114, and forming the PPI line 102, the transitionelement 106, and the PPI pad 104 comprises forming a first PPI line 102,a first transition element 106, and a first PPI pad 104. A method ofmanufacturing a packaging device 110 further comprises forming a secondcontact pad 114′ over the substrate 112 (the formation methods aresimilar to the methods shown in FIG. 1; see also FIG. 18), forming thepassivation layer 116 over a first portion of the second contact pad114′ yet leaving a second portion of the second contact pad 114′exposed, and forming a second PPI line 102′, a second transition element106′, and a second PPI pad 104′ over the passivation layer 116. Thesecond PPI line 102′ is coupled to the second portion of the secondcontact pad 114′ and the second transition element 106′ is coupled tothe second PPI line 102′. The second PPI pad 104′ is coupled to thesecond transition element 106′. An angle α_(2′) of two sides 162 a and162 b of the second transition element 106′ comprises about 90 degreesproximate the second PPI line 102′. Forming the second PPI line 102′,the second transition element 106′, and the second PPI pad 104′comprises forming a second transition element 106′ wherein each of thetwo sides of the second transition element 106′ is substantiallytangential to the second PPI pad 104′.

Advantages of some embodiments of the disclosure include providingpackaging devices 110 that include a transition element 106 in the postpassivation interconnect that improves reliability by preventing orreducing solder wetting on the PPI line 102. Post passivationinterconnect schemes that are implementable as RDLs and other types ofinterconnect routing in packaging devices are disclosed that include aPPI line 102, a transition element 106 including a hollow region 108 insome embodiments coupled to the PPI line 102, and a PPI pad 104 coupledto the transition element 106. The PPI schemes have an optimizedgeometry to reduce a risk of PPI line 102 cracking. The transitionelement 106 comprises a transition zone between the PPI line 102 and PPIpad 104 that is a sacrificial region or buffer region upon which solderwetting may occur, preventing a wetting region from forming on the PPIline 102.

The transition element 106 provides a wetting region for the eutecticmaterial of a conductive material 120 that is later formed on the PPIpad 104. Some embodiments include an extension element 140 that alsoincludes hollow regions 108′/108′ and provides an additional wettingregion. The hollow regions 108, 108′, and 108″ comprise a stopping pointfor excess eutectic material and flux, which prevents or reduces neckingof the eutectic material onto the PPI lines 102. The extension element140/140′ further prevents or reduces the formation of wetting regions ofeutectic material on the PPI lines 102. In some embodiments, solder ballwetting is minimized to only the PPI pad 104.

The PPI designs improve package reliability and prevent PPI line 102cracking. The PPI designs do not require an under-ball metallization(UBM) structure and thus provide a cost savings. A process window formounting the conductive material 120 is improved. Cracks in the PPI line102 are prevented or reduced after the application of the moldingcompound 124, which is applied in some applications using a molding toolclamp which applies a force to the top of the package, for example. Thetransition element 106 and extension element 140/140′ reduce stress onthe end of the PPI line 102 trace, by controlling the conductivematerial 120 wetting to avoid extending the wetting region to the PPIline 102. No additional lithography masks or processes are required toimplement the transition element 106 and extension element 140/140′ intothe packaging device interconnect routing. Furthermore, the packagingdevice 110 structures and designs described herein are easilyimplementable in manufacturing and packaging process flows.

Some advantages of some of the embodiments shown in FIGS. 14 through 25include providing enhanced RDL mechanical strength and reinforcedreliability of the packaging device, by avoiding or preventing cracks atthe necks of the PPI pads. Contact pads in weak locations such ascorners, corner regions, and edge regions have a longer tear length, toavoid cracks proximate the PPI pads. The improved reliability providedby the non-tangential transition elements having the about 70 degreeangles proximate the PPI lines results in increased yield and longerlifetime of packaged devices. A reliability window is enhanced utilizingthe non-tangential transition elements. Furthermore, no additionalmaterial layers or photolithography process are required to implementthe non-tangential transition elements.

In accordance with some embodiments of the present disclosure, apackaging device includes a contact pad disposed over a substrate, and apassivation layer disposed over the substrate and a first portion of thecontact pad, wherein a second portion of the contact pad is exposed. APPI line is disposed over the passivation layer coupled to the secondportion of the contact pad, and a PPI pad is disposed over thepassivation layer. A transition element is disposed over the passivationlayer coupled between the PPI line and the PPI pad, wherein thetransition element comprises a hollow region.

In accordance with other embodiments, a packaging device includes asubstrate, a contact pad disposed over the substrate, and a passivationlayer disposed over the substrate and a first portion of the contactpad, wherein a second portion of the contact pad is exposed. A PPI lineis disposed over the passivation layer coupled to the second portion ofthe contact pad, and a PPI pad is disposed over the passivation layer. Atransition element is disposed over the passivation layer coupledbetween the PPI line and the PPI pad, the transition element comprisinga hollow region. A conductive material is disposed over the PPI pad.

In accordance with other embodiments, a method of manufacturing apackaging device includes forming a contact pad over a substrate, andforming a passivation layer over the substrate and a first portion ofthe contact pad yet leaving a second portion of the contact pad exposed.A PPI line, transition element, and PPI pad are formed over thepassivation layer. The PPI line is coupled to the second portion of thecontact pad. The transition element is coupled to the PPI line andcomprises a hollow region. The PPI pad is coupled to the transitionelement.

In accordance with some embodiments, a packaging device includes acontact pad disposed over a substrate, and a passivation layer disposedover the substrate and a first portion of the contact pad. A PPI line isdisposed over the passivation layer and is coupled to a second portionof the contact pad. A PPI pad is disposed over the passivation layer,and a transition element is disposed over the passivation layer and iscoupled between the PPI line and the PPI pad. The transition elementcomprises a first side and a second side coupled to the first side. Thefirst side and the second side of the transition element arenon-tangential to the PPI pad.

In accordance with other embodiments, a packaging device includes asubstrate, and a plurality of contact pads disposed over the substrate.A passivation layer is disposed over the substrate and a first portioneach of the plurality of contact pads. A PPI line is disposed over thepassivation layer and is coupled to a second portion of each of theplurality of contact pads. A PPI pad is disposed over the passivationlayer and is coupled to each of the PPI lines. The PPI pads are arrangedin an array. A transition element is disposed over the passivation layerand is coupled between each of the PPI lines and each of the PPI pads incorners of the array. Each of the transition elements comprises a firstside and a second side coupled to the first side. The first sides andthe second sides of the transition elements are non-tangential to thePPI pads.

In accordance with other embodiments, a method of manufacturing apackaging device includes forming a contact pad over a substrate, andforming a passivation layer over the substrate and a first portion ofthe contact pad yet leaving a second portion of the contact pad exposed.The method includes forming a PPI line, a transition element, and a PPIpad over the passivation layer. The PPI line is coupled to the secondportion of the contact pad. The transition element is coupled to the PPIline and comprises a substantially triangular shape. An angle of twosides of the transition element comprises about 70 degrees proximate thePPI line. The PPI pad is coupled to the transition element.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A packaging device, comprising: a contact paddisposed over a substrate; a passivation layer disposed over thesubstrate and a first portion of the contact pad; a post passivationinterconnect (PPI) line disposed over the passivation layer and coupledto a second portion of the contact pad; a PPI pad disposed over thepassivation layer; and a transition element disposed over thepassivation layer and coupled between the PPI line and the PPI pad,wherein the transition element comprises a first side and a second sidecoupled to the first side, and wherein the first side and the secondside of the transition element are non-tangential to the PPI pad andwherein an angle between the first side and the second side of thetransition element comprises about 70 degrees proximate the PPI line. 2.The packaging device according to claim 1, wherein the transitionelement comprises a hollow region.
 3. The packaging device according toclaim 2, wherein the hollow region comprises a shape selected from thegroup consisting essentially of: a circle, an oval, a triangle, atriangle with a curved side or a curved corner, a rectangle, a rectanglewith a curved side or a curved corner, a square, a square with a curvedside or a curved corner, a polygon, a polygon with a curved side or acurved corner, a fragment of an annulus, and combinations thereof. 4.The packaging device according to claim 1, wherein the transitionelement includes a third side coupled to the first side and the secondside, wherein the first side and the second side are substantiallystraight, and wherein the third side is curved proximate the PPI pad. 5.The packaging device according to claim 1, wherein a distance from acenter of the PPI pad to the PPI line comprises about 100 μm to about300 μm.
 6. A packaging device, comprising: a substrate; a plurality ofcontact pads disposed over the substrate; a passivation layer disposedover the substrate and a first portion each of the plurality of contactpads; a post passivation interconnect (PPI) line disposed over thepassivation layer and coupled to a second portion of each of theplurality of contact pads; a PPI pad disposed over the passivation layerand coupled to each of the PPI lines, the PPI pads being arranged in anarray; and a plurality of transition elements disposed over thepassivation layer and coupled between each of the PPI lines and each ofthe PPI pads in corners of the array, wherein each of the transitionelements comprises a first side and a second side coupled to the firstside, and wherein the first sides and the second sides of the transitionelements are non-tangential to the PPI pads, wherein respective ones ofthe plurality of transition elements are coupled between each of the PPIlines and each of the PPI pads in corner regions of the array.
 7. Thepackaging device according to claim 6, wherein each of the transitionelements comprises a substantially triangular shape, and wherein acorner of each of the triangular shaped transition elements pointstowards a center or a neutral point (NP) of the array.
 8. The packagingdevice according to claim 6, wherein one of the plurality of transitionelements is coupled between each of the PPI lines and each of the PPIpads in edge regions of the array.
 9. The packaging device according toclaim 6, wherein the array of the PPI pads comprises a predetermineddesired value of a distance to a neutral point (DNP1), and wherein adistance to a neutral point (DNP) of each of the plurality of PPI padsin the corners of the array is greater than the DNP1.
 10. The packagingdevice according to claim 9, wherein transition elements in regionsother than the corners of the array comprise a DNP of greater than DNP1and comprise the first sides and the second sides that arenon-tangential to the PPI pads.
 11. The packaging device according toclaim 10, wherein the PPI pads comprise a plurality of first PPI pads,wherein the PPI pads further comprise a plurality of second PPI pads,and wherein each of the plurality of second PPI pads comprises a DNP ofabout DNP1 or less.
 12. The packaging device according to claim 11,wherein the transition elements comprise first transition elements;wherein the PPI lines comprise first PPI lines; wherein the plurality ofcontact pads comprise first contact pads; wherein the passivation layeris disposed over a first portion each of a plurality of second contactpads; wherein a second PPI line is disposed over the passivation layerand is coupled to a second portion of each of the plurality of secondcontact pads; wherein a second PPI pad is disposed over the passivationlayer and is coupled to each of the second PPI lines; wherein a second atransition element is disposed over the passivation layer and is coupledbetween each of the second PPI lines and each of the second PPI pads;wherein each of the second transition elements comprises a first sideand second side coupled to the first side; and wherein the first sidesand the second sides of the second transition elements are substantiallytangential to the second PPI pads.
 13. The packaging device according toclaim 12, wherein an angle between the first side and the second side ofeach of the first transition elements comprises about 70 degreesproximate the first PPI lines, or wherein an angle between the firstside and the second side of each of the second transition elementsproximate the second PPI lines comprises about 90 degrees.
 14. Thepackaging device according to claim 12, wherein the first transitionelements or the second transition elements comprise a hollow region. 15.A method of manufacturing a packaging device, the method comprising:forming a contact pad over a substrate; forming a passivation layer overthe substrate and a first portion of the contact pad yet leaving asecond portion of the contact pad exposed; and forming a postpassivation interconnect (PPI) line, a transition element, and a PPI padover the passivation layer, wherein the PPI line is coupled to thesecond portion of the contact pad, wherein the transition element iscoupled to the PPI line and comprises a substantially triangular shape,wherein an angle of two sides of the transition element comprises about70 degrees proximate the PPI line, and wherein the PPI pad is coupled tothe transition element.
 16. The method according to claim 15, whereinforming the PPI line, the transition element, and the PPI pad comprisesforming a transition element wherein each of the two sides of thetransition element is non-tangential to the PPI pad.
 17. The methodaccording to claim 15, wherein forming the contact pad comprises forminga first contact pad, wherein forming the PPI line, the transitionelement, and the PPI pad comprises forming a first PPI line, a firsttransition element, and a first PPI pad, and wherein the method furthercomprises: forming a second contact pad over the substrate; forming thepassivation layer over a first portion of the second contact pad yetleaving a second portion of the second contact pad exposed; and forminga second PPI line, a second transition element, and a second PPI padover the passivation layer, wherein the second PPI line is coupled tothe second portion of the second contact pad, wherein the secondtransition element is coupled to the second PPI line, wherein the secondPPI pad is coupled to the second transition element, and wherein anangle of two sides of the second transition element comprises about 90degrees proximate the second PPI line.
 18. The method according to claim17, wherein forming the second PPI line, the second transition element,and the second PPI pad comprises forming a second transition elementwherein each of the two sides of the second transition element issubstantially tangential to the second PPI pad.